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| MBRA210ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2 AMPERES 10 VOLTS * * * * * * * * * * * * * * Low IR, Extends Battery Life 1st in the Market Place with a 10 VR Schottky Rectifier Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Optimized for Low Leakage Current Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 70 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B Available in 12 mm Tape, 5000 Units per 13 inch Reel MARKING DIAGRAM Mechanical Characteristics: SMA CASE 403D PLASTIC B2E1 B2E1 = Device Code ORDERING INFORMATION Device MBRA210ET3 Package SMA Shipping 5000/Tape & Reel MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 125C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Symbol VRRM VRWM VR IO IFSM Value 10 Unit V 2.0 100 A A Tstg, TC TJ dv/dt -65 to +150 -65 to +150 10,000 C C V/ms (c) Semiconductor Components Industries, LLC, 2002 1 December, 2002 - Rev. 3 Publication Order Number: MBRA210ET3/D MBRA210ET3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction-to-Lead (Note 1) Thermal Resistance - Junction-to-Ambient (Note 1) Symbol RJL RJA Min Pad 22 150 1 Inch Pad 15 81 Unit C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current (VR = 10 V) (VR = 5.0 V) IR VF TJ = 25C 0.405 0.480 0.500 TJ = 25C 15 50 TJ = 100C 0.275 0.355 0.385 TJ = 100C 200 500 mA V 1. Mounted on a 3 square FR4 PC Board with min. pads or 1 square copper heat spreader. 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (AMPS) -40 C 0.5 0.6 0.7 10 10 100C 1 1 0.1 0.1 125C 0.2 0.3 75C 25C 0.4 0.1 0.1 125C 0.2 100C 0.3 0.4 25C 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage 1.00E-03 IR, REVERSE CURRENT (AMPS) 125C 1.00E-04 100C 75C 1.00E-05 1.00E-06 25C 1.00E-07 0 2 4 6 8 10 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current http://onsemi.com 2 MBRA210ET3 PFO, AVERAGE POWER DISSIPATION (WATTS) 3.5 dc 3.0 IF, AVERAGE FORWARD CURRENT (AMPS) 2.5 2.0 1.5 1.0 0.5 0 110 120 130 140 150 160 SQUARE WAVE 1.4 1.2 dc 1.0 0.8 SQUARE WAVE 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating - Junction to Lead Figure 5. Forward Power Dissipation 10,000 C, CAPACITANCE (pF) 1000 100 0 2 4 6 8 10 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance R(t), TRANSIENT THERMAL RESISTANCE (C/W) 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 t, TIME (S) 1 10 100 1000 Figure 7. Thermal Response, Junction to Ambient (min pad) http://onsemi.com 3 MBRA210ET3 R(t), TRANSIENT THERMAL RESISTANCE (C/W) 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (S) 1 10 100 1000 Figure 8. Thermal Response, Junction to Ambient (1 inch pad) http://onsemi.com 4 MBRA210ET3 PACKAGE DIMENSIONS SMA CASE 403D-02 ISSUE A S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D-01 OBSOLETE, NEW STANDARD IS 403D-02. DIM A B C D H J K S INCHES MIN MAX 0.160 0.180 0.090 0.115 0.075 0.095 0.050 0.064 0.002 0.006 0.006 0.016 0.030 0.060 0.190 0.220 MILLIMETERS MIN MAX 4.06 4.57 2.29 2.92 1.91 2.41 1.27 1.63 0.05 0.15 0.15 0.41 0.76 1.52 4.83 5.59 D B POLARITY INDICATOR OPTIONAL AS NEEDED C K J H 0.157 4.0 0.0787 2.0 0.0787 2.0 inches mm SMA FOOTPRINT http://onsemi.com 5 MBRA210ET3 Notes http://onsemi.com 6 MBRA210ET3 Notes http://onsemi.com 7 MBRA210ET3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MBRA210ET3/D |
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